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Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Einfluss der Akzeptorkonzentration auf die per Hall untersuchten elektrischen Eigenschaften und die Konzentration von Grenzflächenzuständen von 4H-SiC n-Kanal-MOSFETs
: Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent

Fulltext urn:nbn:de:0011-n-3280166 (245 KByte PDF)
MD5 Fingerprint: 03f749a7a30f195f2e383bbea0ded589
Copyright AIP
Created on: 6.3.2015

Applied Physics Letters 106 (2015), No.6, Art. 062104, 6 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Bundesministerium für Bildung und Forschung BMBF
PICF 10-Program Inter Carnot Fraunhofer; 01SF0804; MobiSiC
Journal Article, Electronic Publication
Fraunhofer IISB ()
SiC; silicon carbide; hall effect; MOSFET; mobility; interface states

Silicon carbide n-type metal-oxide-semiconductor field effect transistors (MOSFETs) with different p-body acceptor concentrations were characterized by Hall effect. Normally OFF MOSFETs with good transfer characteristics and low threshold voltage were obtained with a peak mobility of ∼145 cm2 V−1 s−1 for the lowest acceptor concentration. The results are explained in terms of an increase of Coulomb scattering centers when increasing the background doping. These scattering centers are associated to fixed oxide and trapped interface charges. Additionally, the observed mobility improvement is not related to a decrease of the interface states density as a function of background doping.