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Electrical properties and conduction mechanisms in Hf(x)Ti(y)Si(z)O films obtained from novel MOCVD precursors
|Institute of Electrical and Electronics Engineers -IEEE-, Yugoslavia Section; IEEE Electron Devices Society:|
24th International Conference on Microelectronics 2004. Proceedings. Vol.1 : Nis, Serbia and Montenegro, 16 - 19 May 2004
Piscataway, NJ: IEEE, 2004
|International Conference on Microelectronics (MIEL) <24, 2004, Nis>|
| Conference Paper|
|Fraunhofer IISB ()|
We have investigated electrical behaviour of high-k HfxTi ySizO layers with different Hf:Ti ratios in the film. The films are prepared by MOCVD using novel single-source precursors. Oxide and interface charges, leakage currents and conduction mechanisms are found to be a strong function of the film composition. The films with lower Hf content show lower level of oxide and interface charges and higher dielectric constant whereas those with higher Hf content have better leakage current properties. It is established that in the films with lower Hf content the conduction is governed by a phonon-assisted process, i.e. it is defined rather by the intrinsic properties of the layer than by its defect structure.