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2004
Conference Paper
Titel
Carrier density imaging as a tool for characterising the electrical activity of defects in pre-processed multicrystalline silicon
Abstract
In this work we present Carrier Density Imaging as a tool for the assessment of the recombitation activity of defects in multicrystal line silicon. A model for the excess minority carrier density in areas with homogenously distributed dislocations is developed. The correlation of carrier density images with etch pit density and grain boundary maps allows an assessment of the recombination activity of dislocations and grain boundaries.