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Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests

: Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; IEEE Reliability Society:
IEEE International Integrated Reliability Workshop, IIRW 2014 : Final Report, 12 - 16 October 2014, South Lake Tahoe, California
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-7308-8
ISBN: 978-1-4799-7286-9
ISBN: 978-1-4799-7275-3
ISBN: 978-1-4799-7274-6
International Integrated Reliability Workshop (IIRW) <2014, South Lake Tahoe/Calif.>
Conference Paper
Fraunhofer IAF ()

The reliability of AlGaN/GaN HEMTs with a gate length of 100 nm suitable for applications up to W-band frequencies has been investigated by on- and off-state DC-stress tests. The extrapolated life time measured using the constant current stress test exceeds 105 h at a base plate temperature of 125°C. Very promising reliability results have also been found for the current step-stress tests even at the highest stress level of a DC power density of 12 W/mm. During off-state step-stress test the drain current exceeds the gate current indicating the onset of a buffer leakage current at drain voltages above the operation voltage.