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Growth of GaN crystals and epilayers from solutions at ambient pressure
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2004
Conference Paper
Titel
Growth of GaN crystals and epilayers from solutions at ambient pressure
Author(s)
Meissner, E.
Sun, G.
Hussy, S.
Birkmann, B.
Friedrich, J.
Müller, G.
Hauptwerk
21st Century COE Joint International Workshop on Bulk Nitrides 2003. Proceedings
Konferenz
Joint International Workshop on Bulk Nitrides 2003
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Tags
GaN
low pressure solution growth
III-V semiconductor