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K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology

: Friesicke, C.; Jacob, A.F.; Quay, R.


Bikonis, A. ; Institute of Electrical and Electronics Engineers -IEEE-:
20th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2014 : 16-18 June 2014, Gdansk, Poland
Piscataway, NJ: IEEE, 2014
ISBN: 978-617-607-553-0 (Print)
ISBN: 978-83-931525-2-0
4 pp.
International Conference on Microwaves, Radar and Wireless Communications (MIKON) <20, 2014, Gdansk>
Conference Paper
Fraunhofer IAF ()
gallium nitride; high power amplifiers; MMICs; K-band; satellite communication

This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). They are realized using a 100nm AlGaN/GaN HEMT technology which, in addition to coplanar lines, supports microstrip lines to cover the needs of applications between X- and Ka-band frequencies. The presented MMICs are among the first power amplifiers designed with the microstrip library and are used to evaluate the technology's performance at K-band. Both amplifiers are singlestage designs, where one uses only a single 8 x 75 µm HEMT cell and the other one uses two cells with power-combining. In largesignal measurements, the amplifiers reached, respectively, peak efficiencies of 36% and 38% associated with output powers of 0.93W and 1.48W and drain efficiencies of 61% and 51%.