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N-type black silicon solar cells

 
: Repo, P.; Benick, J.; Vähänissi, V.; Schön, J.; Von Gastrow, G.; Steinhauser, B.; Schubert, M.C.; Hermle, M.; Savin, H.

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Fulltext (PDF; )

Energy Procedia 38 (2013), pp.866-871
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <3, 2013, Hameln>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
Black silicon is an interesting surface texture for solar cells because of its extremely low reflectance on a wide wavelength range and acceptance angle. In this paper we present how black silicon (b-Si) texturization can be applied on the boron doped front surface of an n-type solar cell resulting in an efficiency of 18.7%. We show that the highly boron doped emitter can be formed on black silicon without losing its good optical properties and that atomic layer deposited aluminum oxide provides good surface passivation on these boron doped b-Si emitters.

: http://publica.fraunhofer.de/documents/N-323474.html