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Boron doped a-SiC:H front layers for silicon heterojunction cells

: Temmler, J.; Bivour, M.; Steinkemper, H.; Hermle, M.

Fulltext ()

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

The band gap widening and work function modification of boron doped amorphous silicon layers (a- Si:H) by alloying with methane is experimentally evaluated by spectroscopic ellipsometry and measuring the dark band bending by surface photovoltage (SPV) and the external voltage (Voc), respectively.