Abstract
Silicon Hetero Junction (SHJ) structures and ZnO:Al (AZO) were deposited completely by high throughput industrial inline CVD and PVD deposition systems, respectively. A design of experiment of the AZO deposition parameters was carried out, to find suitable AZO layers for the use in SHJ solar cells. A subsequential thermal treatment on the AZO layers was performed to investigate their performance in a solar cell production. Thin AZO layers with the lowest specific resistance of 0.69 10-3 cm were achieved with low T annealing. The highest carrier mobility of 22 cm2 V-1 s-1 was reached with high temperature annealing.