• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. MF-Sputtered AZO for a-Si SHJ Solar Cells
 
  • Details
  • Full
Options
2014
Journal Article
Title

MF-Sputtered AZO for a-Si SHJ Solar Cells

Abstract
Silicon Hetero Junction (SHJ) structures and ZnO:Al (AZO) were deposited completely by high throughput industrial inline CVD and PVD deposition systems, respectively. A design of experiment of the AZO deposition parameters was carried out, to find suitable AZO layers for the use in SHJ solar cells. A subsequential thermal treatment on the AZO layers was performed to investigate their performance in a solar cell production. Thin AZO layers with the lowest specific resistance of 0.69 10-3 cm were achieved with low T annealing. The highest carrier mobility of 22 cm2 V-1 s-1 was reached with high temperature annealing.
Author(s)
Jeurink, J.
Wagner, Florian  
Park, S.
Kroely, L.
Wolke, Winfried  
Journal
Energy Procedia  
Conference
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) 2014  
Open Access
Link
Link
DOI
10.1016/j.egypro.2014.08.059
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • PV Produktionstechnologie und Qualitätssicherung

  • Silicium-Photovoltaik

  • Modulintegration

  • vapour deposition

  • hetero junction solar cells

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024