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MF-Sputtered AZO for a-Si SHJ Solar Cells

: Jeurink, J.; Wagner, F.; Park, S.; Kroely, L.; Wolke, W.

Postprint (PDF; )

Energy Procedia 55 (2014), pp.777-785
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <4, 2014, S'Hertogenbosch>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Modulintegration; vapour deposition; hetero junction solar cells

Silicon Hetero Junction (SHJ) structures and ZnO:Al (AZO) were deposited completely by high throughput industrial inline CVD and PVD deposition systems, respectively. A design of experiment of the AZO deposition parameters was carried out, to find suitable AZO layers for the use in SHJ solar cells. A subsequential thermal treatment on the AZO layers was performed to investigate their performance in a solar cell production. Thin AZO layers with the lowest specific resistance of 0.69 10-3 cm were achieved with low T annealing. The highest carrier mobility of 22 cm2 V-1 s-1 was reached with high temperature annealing.