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Increased Reliability for J0-Analysis by QSSPC

: Kimmerle, A.; Rothhardt, P.; Wolf, A.; Sinton, R.A.

Postprint (PDF; )

Energy Procedia 55 (2014), pp.101-106
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <4, 2014, S'Hertogenbosch>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Silicon; Lifetime; QSSPC; Narrowing; Saturation Current

This work investigates the influence of physical parameters and of different methods on the analysis of QSSPC measurements with the aim to extract J0-values of diffused surfaces. We show that the right choice of not only the parameter-set and physical models but also the method is crucial. The comparison with injection dependent simulation data leads to a deviation of up to 34 % from the absolute J0-value for parameters found in literature. In contrast, the recently implemented method in the WCT-120 lifetime tester software [1] which accounts for band-gap narrowing in the substrate agrees within 3 % over the full range of assumed base doping. Furthermore we show that the carrier-lifetime in the substrate shows a significant influence on J0-values obtained using the absolute measured recombination and leads to overestimation of up to 50 % even for high base-lifetimes of SRH = 1 ms. The implemented parameter-set and analysis method is based on common accepted models and consistent with various simulation tools, and thus allows for the extraction and comparison of injection- and substrate-independent J0-values.