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Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

 
: Heinrich, M.; Kluska, S.; Binder, S.; Hameiri, Z.; Hoex, B.; Aberle, A.G.

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Journal of applied physics 116 (2014), No.13, Art. 134505, 9 pp.
ISSN: 0021-8979
ISSN: 1089-7550
English
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Siliciummaterialien; Dotierung und Diffusion; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Kontaktierung und Strukturierung; Messtechnik und Produktionskontrolle; doping; silicon; resistance measurement

Abstract
It is investigated how potential drop sheet resistance measurements of areas formed by laser-assisted doping in crystalline Si wafers are affected by typically occurring experimental factors like sample size, inhomogeneities, surface roughness, or coatings. Measurements are obtained with a collinear four point probe setup and a modified transfer length measurement setup to measure sheet resistances of laser-doped lines. Inhomogeneities in doping depth are observed from scanning electron microscope images and electron beam induced current measurements. It is observed that influences from sample size, inhomogeneities, surface roughness, and coatings can be neglected if certain preconditions are met. Guidelines are given on how to obtain accurate potential drop sheet resistance measurements on laser-doped regions.

: http://publica.fraunhofer.de/documents/N-319644.html