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Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

 
: Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Steidel, Katja; Thrun, Xaver; Seidel, Robert; Werner, Thomas

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Fulltext urn:nbn:de:0011-n-3181550 (2.4 MByte PDF)
MD5 Fingerprint: 403ef530479d60d199c2c6703b73858a
Copyright Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Created on: 13.12.2014


Behringer, Uwe F.W. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
30th European Mask and Lithography Conference 2014 : EMLC 2014, 24-25 June, 2014, Dresden, Germany
Bellingham, WA: SPIE, 2014 (Proceedings of SPIE 9231)
ISBN: 9781628412857
Paper 92310F, 10 pp.
European Mask and Lithography Conference (EMLC) <30, 2014, Dresden>
English
Conference Paper, Electronic Publication
Fraunhofer IPMS ()
electron beam direct write; EBDW; CMOS integration; 28nm BEOL; LELE

Abstract
Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho – etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

: http://publica.fraunhofer.de/documents/N-318155.html