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The potential of multicrystalline n-type silicon for high efficiency solar cells

: Schindler, F.; Michl, B.; Kleiber, A.; Steinkemper, H.; Schön, J.; Kwapil, W.; Krenckel, P.; Riepe, S.; Warta, W.; Schubert, M.C.

Fulltext urn:nbn:de:0011-n-3156875 (448 KByte PDF)
MD5 Fingerprint: e09512153d0bfa749e90b70a0fedf697
Created on: 13.12.2014

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; doping; silicon; n-type; resistivity; VGF

This work aims for assessing the efficiency potential of multicrystalline n-type silicon as base material for the production of high efficiency solar cells. To achieve this goal, a multicrystalline (mc) n-type and a mc p-type silicon block were produced from the same silicon feedstock under identical crystallization conditions, only differing in their type of doping. This allows for an investigation of the change in material quality and efficiency potential by switching the type of doping from p- to n-type. The material quality is investigated along the whole block height by means of photoluminescence imaging (PLI) of the diffusion length after different typical solar cell processing steps. An “Efficiency limiting bulk recombination analysis” (ELBA) furthermore allows for a prediction of the spatially resolved efficiency potential by combining injection dependent minority carrier lifetime images with PC1D cell simulations. This investigation reveals a considerably higher efficiency potential after typical solar cell processes along the whole block height of the mc n-type silicon compared to the mc p-type silicon.