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Interdigitated back contact silicon solar cells with tunnel oxide passivated contacts formed by ion implantation

 
: Reichel, C.; Feldmann, F.; Müller, R.; Moldovan, A.; Hermle, M.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-3156541 (301 KByte PDF)
MD5 Fingerprint: 5d5bbac4d2d34cc1178743506babfe66
Created on: 6.12.2014


Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
pp.487-491
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; silicon; annealing; contact; heterojunction; deposition

Abstract
In this work interdigitated back contact (IBC) silicon solar cells featuring tunnel oxide passivated contacts (TOPCon) formed by ion implantation into amorphous silicon (a-Si) layers are proposed. Ion implantation is applied to locally overcompensate an in-situ boron-doped TOPCon layer with phosphorus which opens a promising route to a simplified fabrication process for IBC solar cells featuring passivated contacts. The impact of ion implantation doses and annealing conditions on the passivation quality of the phosphorus-doped TOPCon layers was studied. It was found that excellent surface passivation with implied open-circuit voltages (iVoc) of 710 mV can be achieved for phosphorus implantations overcompensating the in-situ boron-doped TOPCon layers which exhibit iVoc values of 680 mV. The TOPCon layers were implemented into small area IBC silicon solar cells leading to opencircuit voltages (Voc) of 681 mV and pseudo fill factors (pFF) of 82.2% showing the potential of this concept. However, further investigations are required to reduce the contact resistance which at the current status of the development limits the extraction of charge carriers and thus the conversion efficiency.

: http://publica.fraunhofer.de/documents/N-315654.html