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Characterizing local contact resistances of interdigitated back contact silicon solar cells

: Padilla, M.; Michl, B.; Reichel, C.; Hagedorn, N.; Kluska, S.; Haag, S.; Keding, R.; Fell, A.; Kasemann, M.; Warta, W.; Schubert, M.C.

Fulltext urn:nbn:de:0011-n-3156424 (588 KByte PDF)
MD5 Fingerprint: 8b542636e1fd689830132e9b1f59f439
Created on: 26.11.2014

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; doping; silicon; n-type; resistivity; VGF

Next generation high efficiency interdigitated back contact (IBC) silicon solar cells are often designed with complex doping and contacting structures that are sensitive to series resistance induced losses. Particularly local contact resistance problems present a major fill factor loss in industrially feasible solar cell designs. In this work, we use advanced two dimensional device simulations to understand the impact of globally and locally deteriorated electron and hole contacts on a typical IBC design. For a set of examples, the effect of an increased contact resistance on the global current voltage characteristic is compared to the signature of a simulated local series resistance image using luminescence imaging. Consistent interpretations and quantitative agreement between global and local analysis are shown. We find that the local series resistance of IBC cells react identically for globally altered electron and hole contact resistances. However, locally deteriorated electron and hole contact resistances do not impact fill factor losses identically. Together with qualitative interpretation of luminescence images, these findings present valuable information for IBC cell manufacturers for understanding their cell design's sensitivity to local contact resistance or broken finger problems on fill factor and short-circuit current.