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Optoelectronic Characterization of SiC with Embedded Si Nanocrystals as Solar Cell Absorber Material

: Löper, P.; Valenta J.; Canino M.; Glunz S.; Janz S.; Zacharias M.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-, Power & Energy Society -PES-:
39th IEEE Photovoltaic Specialists Conference, PVSC 2013 : Tampa, Florida, USA, 16.06.2013-21.06.2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-3299-3
Photovoltaic Specialists Conference (PVSC) <39, 2013, Tampa/Fla.>
Conference Paper
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Farbstoff-; Organische und Neuartige Solarzellen; Herstellung und Analyse von hocheffizienten Solarzellen; Tandemsolarzellen auf kristallinem Silicium; Industrielle und neuartige Solarzellenstrukturen; carbide; nanocrystals; cells

An optoelectronic analysis of SiC with and without embedded silicon nanocrystals is presented. The layers are implemented as the absorber to membrane-based p-i-n solar cells and characterized by illumination-dependent IV measurements and electroluminescence. The silicon nanocrystals in silicon carbide were prepared by solid-phase crystallization and contacted with doped a-SixC1-x:H. The fundamental transport and recombination properties, i.e. the effective mobility lifetime product, of the nanocrystal layer is determined at device level. For this means, illumination-dependent current-voltage curves are modeled with a voltage-dependent collection function with only two free parameters, and excellent agreement is found between theory and experiment. Electroluminescence measurements are presented and conclusions are drawn regarding the electronic structure of the SiC host matrix.