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THz/subTHz detection by asymmetrically-shaped bow-tie diodes containing 2DEG Layer

Nachweis von Terahertz/Sub-Terahertz Strahlung durch asymmetrisch geformte fliegenförmige Dioden mit 2DEG Schichten
: Seliuta, D.; Tamosiunas, V.; Sirmulis, E.; Asmontas, S.; Suziedelis, A.; Gradauskas, J.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.


Menendez, J. ; American Institute of Physics -AIP-, New York:
Physics of Semiconductors 2004. Vol.B : 27th International Conference on the Physics of Semiconductors, ICPS-27: Flagstaff, Arizona, 26-30 July, 2004
Melville, NY: American Institut of Physics, 2005 (AIP conference proceedings 772)
ISBN: 0-7354-0257-4
International Conference on the Physics of Semiconductors (ICPS) <27, 2004, Flagstaff/Ariz.>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; superlattice; Übergitter; terahertz spectroscopy; Terahertz Spektroskopie

We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.