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Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering

: Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.


IEEE Microwave Theory and Techniques Society; European Microwave Association; Institute of Electrical and Electronics Engineers -IEEE-:
9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings : 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5473-5
ISBN: 978-2-87487-036-1
pp. 345-348
European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>
Conference Paper
Fraunhofer IAF ()
Broadband amplifiers; Class-J; GaN HEMT; packaged powerbars; power amplifiers (PAs)

In this paper a broadband high-efficiency Class- BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on the PA performance are investigated in order to demonstrate and use accurate package models. A novel optimization of bond wires for packaged powerbars is therefore performed and, subsequently a fully characterized PA is effectively designed. For the fully assembled PA module, measurement results demonstrated targeted broadband performance reaching approximately 50% operation bandwidth in the frequency range 1.7 - 2.8 GHz with 52 - 59% PAE, 58 - 66% drain efficiency and 43 - 44.5 dBm delivered output power while maintaining over 10 dB of G(T) .