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A broadband 220-320 GHz medium power amplifier module

: Tessmann, A.; Leuther, A.; Hurm, V.; Massler, H.; Wagner, S.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.-P.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC 2014 : 19 - 22 October 2014, La Jolla, California, USA
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3622-9
4 pp.
Compound Semiconductor Integrated Circuit Symposium (CSIC) <36, 2014, La Jolla/Calif.>
Conference Paper
Fraunhofer IAF ()
H-band; medium power amplifier (MPA); metamorphic high electron mobility transistor (mHEMT); microstrip-to-waveguide transition; packaging; submillimeter-wave monolithic integrated circuit (S-MMIC)

In this paper, we present the development of an ultra-broadband H-band (220 - 325 GHz) submillimeterwave monolithic integrated circuit (S-MMIC) medium power amplifier (MPA) module for use in next generation highresolution imaging systems and communication links operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been developed by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A three-stage amplifier S-MMIC based on compact cascode devices was realized, demonstrating a maximum gain of 22.2 dB at 294 GHz and a small-signal gain of more than 16 dB over the frequency range from 184 to 312 GHz. Finally, mounting and packaging of the monolithic amplifier chip into a WR-3.4 waveguide module was accomplished with only minor reduction in circuit performance.