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Low noise amplifier MMICs for 325 GHz radiometric applications

: Diebold, S.; Kühn, J.; Hülsmann, A.; Leuther, A.; Dahlberg, K.; Jukkala, P.; Kantanen, M.; Kallfass, I.; Zwick, T.; Närhi, T.

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society; Institute of Electronics, Information and Communication Engineers -IEICE-, Communications Society:
Asia-Pacific Microwave Conference, APMC 2014. Vol.1 : November 4-7, 2014, Sendai, Japan
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-6055-2
ISBN: 978-4-9023-3931-4
Asia-Pacific Microwave Conference (APMC) <2014, Sendai>
Conference Paper
Fraunhofer IAF ()
cascode configuration; common-source transistors; HEMTs; LNA; low noise amplifiers; microwave amplifiers; millimeter wave integrated circuits; millimeter wave devices; MMICs; mmic amplifiers; noise figure (NF); sub-millimeter-wave amplifier

For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in commonsource configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.