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2013
Conference Paper
Titel
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Abstract
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.