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Passivation of InAs/(GaIn)Sb short-period superlattice photodiodes with 10 µm cutoff wavelength by epitaxial overgrowth with Al(x)Ga(1-x)As(y)Sb(1-y)

Passivierung von kurzperiodigen InAs/(GaIn)Sb Übergitterphotodioden mit 10 µm Grenzwellenlänge durch epitaktisches Überwachsen mit AlxGa1-xAsySb1-y
: Rehm, R.; Walther, M.; Fuchs, F.; Schmitz, J.; Fleißner, J.


Applied Physics Letters 86 (2005), No.17, Art. 17350, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
type-II; Typ-II; superlattice; Übergitter; GaSb; GaInSb; InAs; surface leakage current; Oberflächenleckstrom; longwave infrared; langwelliges Infrarot

An approach for the passivation of photodiodes based on compounds of the InAs/ GaSb/ AlSb materials family is presented. The passivation is realized by the overgrowth of patterned mesa devices with a quaternary Al(x)Ga(1-x)As(y)Sb(1-y) layer, lattice matched to the GaSb substrate. Proof of concept is demonstrated on infrared photodiodes based on InAs/ (GaIn)Sb superlattices with 10 mu m cutoff wavelength operating at 77 K where suppression of surface leakage currents is observed.