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Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band

: Friesicke, C.; Quay, R.; Jacob, A.F.


IEEE Microwave Theory and Techniques Society; European Microwave Association; Institute of Electrical and Electronics Engineers -IEEE-:
9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings : 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5473-5
ISBN: 978-2-87487-036-1
European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>
European Microwave Week (EuMW) <17, 2014, Rome>
Conference Paper
Fraunhofer IAF ()
gallium nitride; high power amplifiers; MMICs; K-band; satellite communication

This paper presents a comparative study of input and output second-harmonic matching applied to 0.25 µm Al-GaN/GaN HEMTs on s.-i. SiC substrates. The study focuses on the technology's use at K-band, which is close to the maximum usable frequency for high-power amplifier design. Four power amplifier MMICs using different second-harmonic matching schemes are compared in terms of PAE and output power. The results show the relative improvement of power and efficiency that is gained by the inclusion of second-harmonic matching in the design but also the impact on the power/efficiency bandwidth.