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Dynamics of the electric field in a GaAs/AlGaAs superlattice after femtosecond optical excitation: Application of time-resolved spectroscopic techniques

Dynamik des elektrischen Feldes in GaAs/AlGaAs Übergittern nach optischer Anregung im Femtosekundenbereich: Anwendung von zeitaufgelösten Spektroskopietechniken
: Lisauskas, A.; Blöser, C.; Sachs, R.; Roskos, H.G.; Juozapavicius, A.; Valusis, G.; Köhler, K.

Acta physica Polonica. A, General physics, physics of condensed matter, optics and quantum electronics, atomic and molecular physics, applied physics 107 (2005), No.2, pp.250-255
ISSN: 0587-4246
ISSN: 0587-4284
International Symposium on Ultrafast Phenomena in Semiconductors (UFPS) <12, 2004, Vilnius>
Journal Article, Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; superlattice; Übergitter; optical spectroscopy; optische Spektroskopie

We apply time-resolved photocurrent and differential electroreflectance spectroscopy to study the evolution of the internal field in a GaAs/ AlGaAs superlattice after pulsed optical excitation at low temperature. The electric field dynamics is investigated by tracing the spectral position of the Wannier-Stark transitions as a function of delay time. We determine the electron sweep-out time, extract detailed information about the picosecond-time-scale drift of the charge carriers by comparing the measured data with the results of semi-classical self-consistent model calculations, and evaluate the two experimental techniques with respect to their ability to provide information about the carrier and field dynamics.