Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer

Wachstum von AlGaN/GaN basierten elektronischen Bauelementstrukturen mit semiisolierendem GaN-Puffer und AlN Zwischenschicht
: Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.


Physica status solidi. C 2 (2005), No.7, pp.2639-2642
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Journal Article
Fraunhofer IAF ()
AlGaN; GaN; HEMT; semi-insulating; semi-isolierend; buffer; Puffer; AlN; HPA

Heterostructures of GaN/AlGaN for power applications are grown by metal organic vapor phase epitaxy in a multiwafer reactor on sapphire and SiC substrates. The insulating properties of the GaN buffer and the influence of an AlN interlayer on the two-dimensional electron gas transport properties of high electron mobility transistor structures have been studied. By optimizing the growth conditions the resistivity could be increased to 10(exp 11) ohmcm. For GaN/AlGaN heterostructures on sapphire with a 1 nm AlN interlayer a room temperature mobility of 1780 cm2/Vs and an electron sheet carrier density of 1.2x10(exp 13) cm-2 were achieved. Power devices were fabricated on s.i. SiC showing a power density of 4.9 W/mm at 10 GHz for a multifinger transistor with a gate width of 1 mm.