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High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices

Siliziumnitrit-Dünnfilmhergestellt mittels hochdichtem Plasma-CVD zur Passivierung von II-V Verbindungshalbleiter-Bauelementen
 
: Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G.

CS MANTECH, 20th International Conference on Compound Semiconductor Manufacturing Technology 2005 : New Orleans, Louisiana, April, 11 - 14, 2005
St. Louis: GaAS MANTECH Inc., 2005
ISBN: 1-893580-06-7
pp.137-140
International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) <20, 2005, New Orleand/La.>
English
Conference Paper
Fraunhofer IAF ()
high-density plasma; hochdichtes Plasma; SiN; Silikonnitrid-Film; ECR-PECVD; GaN; HEMT; passivation; Passivierung; dielectric film; dielektrische Schicht

Abstract
We report on the ECR-plasma deposition and characterization of silicon nitride film exhibiting high breakdown field strength (>8 MV/cm) for applications in III/V-based compound semiconductor devices. The film deposited at 240 deg C contains around 13 at.% hydrogen. The hysteresis in mechanical stress, obtained from thermal cycling of the stress in film is negligible. The application of the film is being demonstrated in GaN-based HEMTs. The devices with gate length 0.3 mu m and a periphery of 8x125 mu m yielded cw output power density of 5.2 W/mm at 10 GHz and 35 V drain bias after passivation with the SiN film.

: http://publica.fraunhofer.de/documents/N-31184.html