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2005
Conference Paper
Titel
High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Alternative
Siliziumnitrit-DĂ¼nnfilmhergestellt mittels hochdichtem Plasma-CVD zur Passivierung von II-V Verbindungshalbleiter-Bauelementen
Abstract
We report on the ECR-plasma deposition and characterization of silicon nitride film exhibiting high breakdown field strength (>8 MV/cm) for applications in III/V-based compound semiconductor devices. The film deposited at 240 deg C contains around 13 at.% hydrogen. The hysteresis in mechanical stress, obtained from thermal cycling of the stress in film is negligible. The application of the film is being demonstrated in GaN-based HEMTs. The devices with gate length 0.3 mu m and a periphery of 8x125 mu m yielded cw output power density of 5.2 W/mm at 10 GHz and 35 V drain bias after passivation with the SiN film.
Author(s)