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Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration

: Sander, Christoph; Standke, Yvonne; Niese, Sven; Rosenkranz, Rüdiger; Clausner, André; Gall, Martin; Zschech, Ehrenfried


Microelectronics reliability 54 (2014), No.9-10, pp.1959–1962
ISSN: 0026-2714
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <25, 2014, Berlin>
Journal Article, Conference Paper
Fraunhofer IKTS ()
3D integration; CTE; indentation; ultra low-k dielectrics

Managing the emerging internal mechanical stress in chips, particularly if they are 3D stacked, is a key task to maintain performance and reliability of microelectronic products. Hence, a strong need of a physics-based simulation methodology emerges. This physics-based simulation, however, requires material parameters with high accuracy. A full-chip analysis can then be performed, balancing the need for local resolution and computing time. The key for an efficient simulation of a 3D stacked IC is a comprehensive database with material properties for multiple scales of the affected materials. Therefore, effective "composite-type" material data for several regions of interest are needed. Advanced techniques to measure FEA- and design-relevant properties such as adhesion properties and effective CTE values are presented.