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Investigation of anti-reflection-coating stacks for silicon heterojunction solar cells

: Meiners, B.-M.; Holinski, S.; Schäfer, P.; Hohage, S.; Borchert, D.

Fulltext urn:nbn:de:0011-n-3112879 (664 KByte PDF)
MD5 Fingerprint: edeae663feb924a031c124feab5fd0d4
Created on: 5.11.2014

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; amorphe Silicium-Stapelsolarzelle; heterojunction; TCO; properties; modelling; coating

High-efficiency silicon heterojunction solar cells, like the Panasonic HIT cell [1], use transparent conductive oxides (TCO) as anti-reflection layers. We investigated whether a single TCO layer or a two layers ARC stack is the better option for such a cell. Therefore we simulated the reflection and transmission properties of single indium tin oxide (ITO)-layers with various optical constants and layer systems with two different anti-reflection coatings (ARC). We also calculated the short-circuit current density (Jsc) for these systems. We found out that with a second anti-reflection layer the standard weighted reflectance (SWR) can be reduced by 5 % compared to single layers coatings. The best calculated Jsc for non-textured surfaces was 35.7 mA/cm2. With a texture we consider an additional Jsc gain of approx. 3 mA/cm2 approaching 39 mA/cm2.