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Local boron doping for P-type PERL silicon solar cells fabricated by laser processing of doped silicon nanoparticle paste

: Jäger, U.; Wolf, A.; Wufka, C.; Tomizawa, Y.; Imamura, T.; Soeda, M.; Ikeda, Y.; Shiro, T.


Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; processing; silicon solar cell; doping

We present the fabrication of local boron doping for local contacts for p-type PERL solar cells. A boron doped silicon nanoparticle paste is printed onto the passivated rear side of the wafer and is locally diffused into the wafer by an adapted laser process. Thus a local p+ doping is formed and the passivation is opened in a single processing step. After a description of the process and the properties of the local boron doping, fabricated solar cells are discussed. A maximum conversion efficiency of 20.0% is achieved for PERL type solar cells on 6-inch MCz-Si wafers. High fill factors above 79% and high open circuit voltages above 650 mV are observed, highlighting the effectiveness of the local back surface field underneath the rear side point contacts.