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Determination of the dopant-related base resistivity in presence of thermal donors
Thermal donors can form in Czochralski grown silicon during the cooling of the ingot. Base resistivity measurements in the as-cut state as well as the inline control of the emitter sheet resistance by inductive base resistivity measurements are influenced by these oxygen clusters. The influence of the thermal donors on the measurements results as well as on calculation results is quantified within this paper. Additionally, a new PL based method (PL-BR) for the determination of the dopant-related base resistivity despite the presence of thermal donors is presented. With the PL-BR method the dopant-related base resistivity and therefore the emitter sheet resistivity can be calculated with a significant higher accuracy than standard base resistivity measurements.