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Determination of the dopant-related base resistivity in presence of thermal donors

: Broisch, J.; Haunschild, J.; Rein, S.


Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle; resistivity; silicon; donors; PL-imaging

Thermal donors can form in Czochralski grown silicon during the cooling of the ingot. Base resistivity measurements in the as-cut state as well as the inline control of the emitter sheet resistance by inductive base resistivity measurements are influenced by these oxygen clusters. The influence of the thermal donors on the measurements results as well as on calculation results is quantified within this paper. Additionally, a new PL based method (PL-BR) for the determination of the dopant-related base resistivity despite the presence of thermal donors is presented. With the PL-BR method the dopant-related base resistivity and therefore the emitter sheet resistivity can be calculated with a significant higher accuracy than standard base resistivity measurements.