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Asymmetrical memristor

 
: Klefenz, Frank; Husar, Peter; Williamson, Adam; Schumann, Lars; Hiller, Lars

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Frontpage ()

EP EP50598 : 20130114
English
Patent, Electronic Publication
Fraunhofer IDMT ()

Abstract
Embodiments of the present invention provide a memristor comprising a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.

: http://publica.fraunhofer.de/documents/N-311161.html