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Halbleiterbauelement mit einer Passivierungsschicht aus hydriertem Aluminiumnitrid sowie Verfahren zur Oberflächenpassivierung von Halbleiterbauelementen

SEMI-CONDUCTOR COMPONENT WITH A PASSIVATION LAYER MADE FROM HYDROGENATED ALUMINIUM NITRIDE AND METHOD FOR SURFACE PASSIVATION OF SEMI-CONDUCTOR COMPONENTS
 
: Wolke, Winfried; Wagner, Florian; Krugel, Georg

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Frontpage ()

DE 102012016298 A1: 20120816
German
Patent, Electronic Publication
Fraunhofer ISE ()

Abstract
The invention relates to a semi-conductor component comprising a base emitter, electric contacts and at least one passivation layer which is made of hydrogenated aluminum nitride or contains essentially said latter. The invention also relates to a corresponding method for the surface passivation of semi-conductor components.

: http://publica.fraunhofer.de/documents/N-311087.html