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Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat

Method for applying aluminum oxide layer on semiconductor substrate for photovoltaic solar cell, involves creating plasma zone between supply point of aluminum-containing gas and suction location of gases in process chamber
 
: Saint-Cast, Pierre; Hofmann, Marc; Rentsch, Jochen; Preu, Ralf

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Frontpage ()

DE 102012219667 A1: 20121026
German
Patent, Electronic Publication
Fraunhofer ISE ()

Abstract
The method involves providing a semiconductor substrate (3). The semiconductor substrate is inserted into a process chamber (1) and an aluminum oxide layer is deposited by plasma enhanced chemical vapor deposition to form plasma in a plasma zone by supplying the aluminum-containing gas. The suction of the gases from the process chamber is enabled during the chemical vapor deposition. The plasma zone is created with respect to the aluminum-containing gas flow between the supply point of the aluminum-containing gas and suction location of the gases in the process chamber. An independent claim is included for device for applying aluminum oxide layer on semiconductor substrate.

: http://publica.fraunhofer.de/documents/N-311074.html