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New UV-detectors for the UV-A to UV-C region with high longterm stability

: Rütters, M.; Albrecht, B.; Kopta, S.

RadTech Europe:
RadTech Europe 2013. CD-ROM : Europe's event for UV/EB Curing. UV/EB - Growing through Innovation. October 15-17, 2013, Basel, Switzerland
Hannover: Vincentz, 2013
6 pp.
RadTech Europe Conference & Exhibition <25, 2013, Basel>
Conference Paper
Fraunhofer IFAM ()

The authors have shown that the UV-detectors made from the semiconductor material Aluminum-Gallium-Nitride are suitable for the continuous monitoring of high intensity UV-light sources. An increase of photocurrent with increasing temperature can be explained by a temperature-dependent shift of the cut-off wavelength of these detectors over the rather complex spectrum of a doped Hg-lamp. Further measurements are currently performed with UV-B detectors with a cut-off wavelength very distinct from significant emission lines in order to rule-out any additional effects from the drift of the cut-off wavelength. In a next generation of AlGaN-based UV-detectors the composition of the semiconductor material will be varied to extend the active region up to 400 nm in order to include the UV-emission lines of Hg-lamps relevant for UV-curing. Results were achieved in a joint project of the Fraunhofer Institutes IAF, IFAM, ISIT, IPM and IOSB supported by the Fraunhofer Internal Programs under Grant No. WISA 823 252.