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Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications

: Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
16h European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014. Vol.1 : 26-28 August 2014, Lappeenranta, Finland
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3016-6
ISBN: 978-1-4799-3015-9
European Conference on Power Electronics and Applications (EPE) <16, 2014, Lappeenranta>
Energy Conversion Congress and Exposition (ECCE) <2014, Lappeenranta>
Conference Paper
Fraunhofer IAF ()
high frequency power converter; wide bandgap devices; packaging; HFET

AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching are investigated in this paper. A design study for a fast switching environment for power devices is provided including an analysis of the technology, the fabrication, and the performances of large-area AlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and the results are being discussed. Furthermore the power conversion efficiency is being evaluated for different power- and switching-frequency ranges by means of a converter test board. At 100 kHz efficiencies up to 98.7 % at power levels of up to 1.6 kW could be achieved. At 1 MHz and 1 kW input power an efficiency of 97.1 % was measured.