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Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications

: Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.

European Space Agency -ESA-, Paris:
7th Wide Band Gap (WBG) Semiconductor and Components Workshop 2014. Proceedings : 11-12 September 2014, Frascati, Italy
Frascati, 2014
Wide Band Gap Semiconductor and Components Workshop <7, 2014, Frascati>
Conference Paper
Fraunhofer IAF ()

We present results from our gaN high-voltage transistor technology on Si-substrates used for power switching. An overview is given on epitaxial growth and device processing leading to buffer with high vertical and lateral isolation which are essential prerequisites for transistors with breakdown voltages beyond 1000 V. The importance of defect density reduction is highlighted based on the yield of structures up to more than 300 mm gate width. Structures with such large gate widths are demonstrated to have output currents up to 30 A unter continuous-current conditions whereas around 100 A are obtained in pulsed operation. It is demonstrated that our GaN-technology already surpasses Si and SiC technologies in in key static and dynamic parameters. The importance of traps in close vicinity to the channel is highlighted in order to limit or even suppress the increase of on-state resistance after off-state stress. Finally, results from boost converter operation at 100 kHz and 1 MHz evidence the potential of GaN transistor as the efficiency of benchmarking Si-based boost converters are exceeded with efficiencies close to 99 % for our GaN devices.