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Cryogenic low noise amplifier development for 67-116 GHz

: Kotiranta, M.; Bruch, D.; Leuther, A.; Massler, H.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.; Türk, S.; Goliasch, J.; Schäfer, F.


Institute of Electrical and Electronics Engineers -IEEE-:
39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2014. Proceedings. Vol.2 : September 14-19, 2014, The University of Arizona, Tucson, AZ
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3877-3
ISBN: 978-1-4799-3878-0
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) <39, 2014, Tucson/Ariz.>
Conference Paper
Fraunhofer IAF ()

Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed using the 50 nm metamorphic high electron mobility transistor technology of Fraunhofer IAF. Both amplifiers have been measured on-wafer at room temperature and one of them additionally in a waveguide module at an ambient temperature of 18 K. The average gain and noise temperature in the band 75-110 GHz are 23 dB and 69 K, respectively, in the latter case.