Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Heavily doped Si:P emitters of crystalline Si solar cells: Recombination due to phosphorus precipitation

: Min, B.; Wagner, H.; Dastgheib-Shirazi, A.; Kimmerle, A.; Kurz, H.; Altermatt, P.P.


Physica status solidi. Rapid research letters 8 (2014), No.8, pp.680-684
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Herstellung und Analyse von hocheffizienten Solarzellen; Pilotherstellung von industrienahen Solarzellen; Emitter; doping; Recombination; Silicon; cells

The measured saturation current density J(0e) of heavily phosphorus-doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley-Read-Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies be-tween measured and simulated J(0e) values, observed persistently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus-diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced.