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Modeling of SiC power modules with double sided cooling

 
: Brinkfeldt, K.; Neumaier, K.; Mann, A.; Zschieschang, O.; Otto, A.; Kaulfersch, E.; Edwards, M.; Andersson, D.

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Institute of Electrical and Electronics Engineers -IEEE-:
15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014 : 7-9 April 2014, Ghent , Belgium
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-4791-1 (Print)
ISBN: 978-1-4799-4790-4
pp.597-602
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) <15, 2014, Ghent>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved current density and thermal conductivity allows SiC-based power modules to be smaller than their silicon counterparts for comparable current densities. The active chip area can be reduced further by effectively cooling the devices. In this work, a new power module including SiC bipolar junction transistors (BJT) and diodes and integrated double sided cooling will be introduced. The target application of these modules is a new drive-train system for commercial electric vehicles.

: http://publica.fraunhofer.de/documents/N-301937.html