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Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells

: Haug, H.; Kimmerle, A.; Greulich, J.; Wolf, A.; Stensrud Marstein, E.


Solar energy materials and solar cells 131 (2014), pp.30-36
ISSN: 0927-0248
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <4, 2014, S'Hertogenbosch>
Journal Article, Conference Paper
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Simulation; Statistics

In this work we present a modified version of the commonly used semiconductor simulation program PC1D, named cmd-PC1D 6.0, which applies Fermi-Dirac (F-D) statistics, thus improving on the existing Boltzmann approximation that is employed in the original program. Several up-to-date models for crystalline Si have been implemented in the new program, including injection dependent band gap narrowing, carrier mobility and Auger recombination. The results obtained using cmd-PC1D 6.0 are verified against well-accepted and modern simulations tools for a range of both phosphorus- and boron-doped emitters with varying surface concentration. We find a good correspondence between the simulation results obtained with the different programs, with a deviation of less than 2 fA/cm2 for the calculated emitter saturation current density using F-D statistics and less than 0.8 % relative deviation in all the main solar cell parameters under 1 sun illumination. By using the correct carrier statistics and the appropriate set of models it is now possible to avoid the commonly used effective models and adapted values, thus taking a large step in bringing PC1D further towards a more general, consistent and physically meaningful simulation tool for Si solar cells. The new program can be run from a command line or within a recently developed, powerful graphical user interface. Both cmd-PC1D 6.0 and the graphical user interface are freely available for download.