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Characterization of electrical contacts on silicon (100) after ablation and sulfur doping by femtosecond laser pulses

: Saring, P.; Baumann, A.L.; Kontermann, S.; Schade, W.; Seibt, M.


Murphy, J.D.:
Gettering and Defect Engineering in Semiconductor Technology XV, GADEST 2013 : Selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22 - 27, 2013, Oxford, UK
Durnten-Zurich: TTP, 2014 (Solid state phenomena 205-206)
ISBN: 978-3-03785-824-0
International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) <15, 2013, Oxford>
Conference Paper
Fraunhofer HHI ()

This paper investigates the influence of different number of laser pulses on contact behavior and conductivity of the surface layer of femtosecond laser microstructured, sulfur-doped silicon. Single shot laser processed silicon (Pink Silicon) is characterized by low surface roughness, whereas five shot laser processed silicon (Grey Silicon) has an elevated sulfur content with a surface roughness low enough to maintain good contacting. To laterally confine the laser induced pn-junction part of the Grey Silicon sample surface is etched off. The etching depth is confirmed to be sufficient to completely remove the active n-type sulfur layer. While Pink Silicon shows little or no lateral conductivity within the laser processed layer, Grey Silicon offers acceptable conductivity, just as expected by the fact of having incorporated a higher sulfur dopant content. Recombination dominates the irradiated regions of Pink Silicon and suppresses excess charge carrier collection. Grey Silicon, while showing sufficient lateral conductivity, still shows regions of lower conductivity, most likely dominated by the laser irradiation-induced formation of dislocations. According to our results, the optimum laser pulse number for electrical and structural properties is expected to be in the range between one and five laser pulses.