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Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs

 
: Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.

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Okumura, H.:
Silicon Carbide and Related Materials 2013. Vol.1 : Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Dürnten: Trans Tech Publications, 2014 (Materials Science Forum 778-780)
ISBN: 978-3-03835-010-1 (Print)
ISBN: 978-3-03795-705-9 (CD-ROM)
ISBN: 978-3-03835-010-1 (Print + CD-ROM)
ISBN: 978-3-03826-391-3 (eBook)
pp.583-586
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
English
Conference Paper
Fraunhofer IISB ()

Abstract
In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm2/Vs to 92.4 cm2/Vs, it will be shown that for p-doping concentrations above 5·1016 cm-3 Coulomb scattering is the dominant scattering mechanism for both, low-and high-field mobility. In contrast, for p-doping concentrations below 5·1016, cm-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.

: http://publica.fraunhofer.de/documents/N-301220.html