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Reliability comparison of pure ZrO2 and Al- doped ZrO2 MIM capacitors

 
: Seidel, K.; Weinreich, Wenke; Polakowski, P.; Triyoso, D.H.; Nolan, M.G.; Yiang, K.Y.; Chu, S.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Integrated Reliability Workshop, IIRW 2013 : South Lake Tahoe, California, USA, 13 - 17 October 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-0349-8
ISBN: 978-1-4799-0350-4
ISBN: 978-1-4799-0352-8
pp.185-186
International Integrated Reliability Workshop (IIRW) <2013, South Lake Tahoe/Calif.>
English
Conference Paper
Fraunhofer IPMS ()

Abstract
The integration of passive devices on chip plays an important role in system miniaturization and enabling of future applications. In order to keep pace with the device scaling and reduction of chip area integrated MIM capacitors of enhanced capacitance density are required for supply buffering, decoupling or signal filtering.

: http://publica.fraunhofer.de/documents/N-301023.html