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Power scaling of narrow-linewidth 2μm GaSb-based semiconductor disk laser

 
: Kaspar, S.; Rattunde, M.; Adler, S.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.

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Institute of Electrical and Electronics Engineers -IEEE-:
Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference, CLEO®/Europe-IQEC 2013 : 12-16 May 2013, Munich, Germany
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-0593-5 (Print)
ISBN: 978-1-4799-0594-2
1 pp.
Conference on Lasers and Electro-Optics (CLEO Europe) <2013, Munich>
International Quantum Electronics Conference (IQEC) <2013, Munich>
English
Conference Paper
Fraunhofer IAF ()

Abstract
In recent years, optically pumped semiconductor disk lasers (SDLs) have attracted considerable interest, since they deliver simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance SDLs based on the (AlGaIn)(AsSb) material system with emission wavelengths ranging from 1.8 to 2.8 m has been reported [2-3]. Room-temperature output powers of up to 4.2 W [4] have been demonstrated recently, making this laser source interesting for direct applications such as medical therapy or materials processing. Further applications in this wavelength regime such as high-resolution spectroscopy, long-range gas sensing, LIDAR and free-space optical data transmission via phase modulation require single-mode narrow-linewidth (kHz range) emission and output powers in the 0.1-1 W range. Higher output powers are a clear benefit since, e.g. in data transmission, fewer, or even no subsequent power amplifier stages will be required. A typical benchmark for amplifier-free airborne communications is 1 W at <100 kHz linewidth.

: http://publica.fraunhofer.de/documents/N-300790.html