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AlxGa1-xAs minority carrier lifetime enhancement at low temperatures

: Heckelmann, S.; Lackner, D.; Dimroth, F.; Bett, A.W.


Applied Physics Letters 103 (2013), No.13, Art.132102, 3 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer ISE ()

DX-centers in AlxGa1-xAs are known to reduce the minority carrier lifetime. Thus, DX-centers influence various semiconductor device characteristics. However, at temperatures below 100 K, we observed an unexpected improvement in the short circuit current density of an investigated Al0.37Ga0.63As solar cell. Using temperature-dependent capacitance measurements taken on a similar Al0.37Ga0.63As n-p+-diode, we correlated this behavior with the persistent photoconductivity effect. This effect derives from the suppressed silicon-DX-center generation inside the n-doped material at low temperatures.