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2013
Conference Paper
Titel
32 µW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures
Abstract
We measured pulsed THz emission from high-mobility MBE grown InGaAs/InAlAs multi-nanolayer structures. The detected average THz power was 32 W at 32 mW optical excitation power. The bandwidth of the THz pulses exceeds 4 THz. OCIS codes: (300.6495) Spectroscopy, terahertz; (160.5140) Photoconductive materials.