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High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies

: Cheron, J.; Campovecchio, M.; Quere, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.

European Microwave Association:
43rd European Microwave Conference, EuMC 2013. Proceedings : 6.-11. Oktober, 2013, Nürnberg, European Microwave Week, EuMW
Louvain-la-Neuve: European Microwave Assiciation, 2013
ISBN: 978-2-87487-031-6
European Microwave Conference (EuMC) <43, 2013, Nuremberg>
European Microwave Week (EuMW) <16, 2013, Nuremberg>
Conference Paper
Fraunhofer IAF ()

Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realized using AlGaN/GaN HEMTs with a gate length of 100 nm. Two single-stage amplifiers are presented to highlight the potential of this GaN technology. A dual-stage amplifier is designed to reach high power performances. In continuous-wave (CW) operation, MMICs have provided up to 1.4 W, 2.4 W and 4.7 W of output power associated with (in this order) 41%, 33%, and 28% of PAE, respectively. The dual-stage MMIC delivered an output power higher than 4 W, associated with 27% of PAE and 9.8 dB of power gain from 29 GHz to 31 GHz.