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Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime

: Blum, A.L.; Swirhun, J.S.; Sinton, R.A.; Yan, F.; Herasimenka, S.; Roth, T.; Lauer, K.; Haunschild, J.; Lim, B.; Bothe, K.; Hameiri, Z.; Seipel, B.; Xiong, R.; Dhamrin, M.; Murphy, J.D.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-, Power & Energy Society -PES-:
39th IEEE Photovoltaic Specialists Conference, PVSC 2013 : Tampa, Florida, USA, 16.06.2013-21.06.2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-3299-3
Photovoltaic Specialists Conference (PVSC) <39, 2013, Tampa/Fla.>
Conference Paper
Fraunhofer ISE ()

Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples.