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On the crack and delamination risk optimization of a Si-interposer for LED packaging

: Auersperg, J.; Dudek, R.; Jordan, R.; Bochow-Neß, O.; Rzepka, S.; Michel, B.


Microelectronics reliability 54 (2014), No.6-7, pp.1223-1227
ISSN: 0026-2714
International Conference on Materials for Advanced Technologies (ICMAT) <7, 2013, Singapore>
Journal Article, Conference Paper
Fraunhofer ENAS ()
Fraunhofer IZM ()

3D-integration becomes more and more an important issue for advanced LED packaging solutions as it is a great challenge for the thermo-mechanical reliability to remove heat from LEDs to the environment by heat spreading or specialized cooling technologies. Thermal copper-TSVs provide an elegant solution to effectively transfer heat from LED to the heat spreading structures on the backside of a substrate. But, the use of copper-TSVs generates also novel challenges for reliability as well as also for reliability analysis and prediction, i.e. to manage multiple failure modes acting combined - interface delamination, cracking and fatigue, in particular. In this case, the thermal expansion mismatch between copper and silicon yields to risky stress situations. To overcome cracking and delamination risks in the vicinity of thermal copper-TSVs the authors performed extensive simulative work by means of fracture mechanics approaches - an interaction integral approach within a simulative DoE and the X-FEM methodology to help clarifying crack propagation paths in silicon. The results provided a good insight into the role of model parameters for further optimizations of the intended thermal TSV-approaches in LED packaging applications.