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2014
Journal Article
Titel
Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures
Abstract
We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm(-1) (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.
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